bf995 document number 85009 rev. 1.6, 02-feb-06 vishay semiconductors www.vishay.com 1 13628 g 2 g 1 d s electrostatic sensitive device. observe precautions for handling. 4 3 2 1 n-channel dual gate mos-fieldeffect tetrode, depletion mode features ? integrated gate protection diodes ? high cross modulation performance ? low noise figure ? high agc-range ? low feedback capacitance ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? input- and mixer stages especially for fm- and vhf ? tv-tuners up to 300 mhz mechanical data case: sot-143 plastic case weight: approx. 8.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code type marking remarks bf995a bf995a-gs08 mb tape and reel bf995b BF995B-GS08 mb tape and reel parameter test condition symbol value unit drain current i d 30 ma drain - source voltage v ds 20 v gate 1/gate 2 - source peak current i g1/g2sm 10 ma total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c e3
www.vishay.com 2 document number 85009 rev. 1.6, 02-feb-06 bf995 vishay semiconductors maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified electrical ac characteristics t amb = 25 c, unless otherwise specified v ds = 15 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz parameter test condition symbol value unit channel ambient 1) r thcha 450 k/w parameter test condition ty p e symbol min ty p. max unit drain - source breakdown voltage i d = 10 a, - v g1s = - v g2s = 4 v v (br)ds 20 v gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 814v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 814v gate 1 - source leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 100 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 100 na drain current v ds = 15 v, v g1s = 0, v g2s = 4 v bf995 i dss 418ma bf995a i dss 4 10.5 ma bf995b i dss 9.5 18 ma gate 1 - source cut-off voltage v ds = 15 v, v g2s = 4 v, i d = 20 a - v g1s(off) 3.5 v gate 2 - source cut-off voltage v ds = 15 v, v g1s = 0, i d = 20 a - v g2s(off) 3.5 v parameter test condition symbol min ty p. max unit forward transadmittance |y 21s |12 15 ms gate 1 input capacitance c issg1 3.7 pf gate 2 input capacitance v g1s = 0, v g2s = 4 v c issg2 1.6 pf feedback capacitance c rss 25 ff output capacitance c oss 1.6 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 20 db agc range v g2s = 4 to -2 v, f = 200 mhz g ps 50 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f1.82.5db
bf995 document number 85009 rev. 1.6, 02-feb-06 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. total power dissipat ion vs. ambient temperature figure 2. drain current vs . drain source voltage figure 3. forward transadmittance vs. gate 2 source voltage 0 50 100 150 200 250 300 0 204060 8 0 100 120 140 160 96 12159 p - total po w er dissipation (m w ) tot t am b -am b ient temperat u re (c) 0 2 4 6 8 10 12 14 16 1 8 20 22 0246 8 10 12 14 16 1 8 20 22 2 4 v ds ? drain so u rce v oltage ( v ) 96 12160 i ? drain c u rrent (ma) d v g1s = 0.6 v 0.4 v 0.2 v 0 - 0.2 v - 0.4 v - 0.6 v - 0. 8 v 0 2 4 6 8 10 12 14 16 1 8 20 22 24 - 2- 10123456 v g2s ?gate2so u rce v oltage ( v ) 96 12161 y?for w ard transadmittance (ms) 21s v ds =15 v i ds =10ma v g1s =0.5 v 0 v - 0.5 v figure 4. forward transadmittance vs. gate 1 source voltage figure 5. gate 1 input capacitance vs. gate 1 source voltage figure 6. gate 2 input capacitance vs. gate 2 source voltage 0 2 4 6 8 10 12 14 16 1 8 20 22 - 2 - 1.5 - 1 - 0.5 0 0.5 1 1.5 2 2.5 3 3.5 v g1s -gate1so u rce v oltage ( v ) 96 12162 y?for w ardtransadmittance (ms) 21s v ds =15 v f=1mhz v g2s =5 v 4 v 3 v 2 v 1 v 0 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 2.0 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g1s ?gate1so u rce v oltage ( v ) 96 12163 c ? gate 1 inp u t capacitance (pf) issg1 v ds =15 v v g2s =4 v f=1mhz 0.0 0.4 0. 8 1.2 1.6 2.0 2.4 2. 8 3.2 3.6 4.0 - 2- 101234567 v g2s ?gate2so u rce v oltage ( v ) 96 12164 c ? gate 2 inp u t capacitance (pf) issg2 v ds =15 v v g1s =0 f=1mhz
www.vishay.com 4 document number 85009 rev. 1.6, 02-feb-06 bf995 vishay semiconductors figure 7. output capacitance vs. drain source voltage figure 8. short circuit input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0246 8 10 12 14 16 1 8 20 2 2 v ds - drain so u rce v oltage ( v ) 96 12165 c?o u tp u t capacitance (pf) oss v g2s =4 v f=1mhz 0 2 4 6 8 10 12 14 16 1 8 01234567 8 910 re (y 11 ) (ms) 96 12166 im(y ) (ms) 11 v ds =15 v v g2s =4 v i d = 5...20 ma f = 50...700 mhz f =700 mhz 600 mhz 500 mhz 400 mhz 300 mhz 200 mhz 100 mhz figure 9. short circuit fo rward transfer admittance figure 10. short circuit output admittance - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 0246 8 10 12 14 16 1 8 20 22 24 26 2 8 re (y 21 ) (ms) 96 12167 im(y ) (ms) 21 v ds =15 v v g2s =4 v f = 50...700 mhz f=50mhz 600 mhz 500 mhz 400 mhz 300 mhz 200 mhz 100 mhz 700 mhz i d =5ma 10 ma 20 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 re (y 22 )(ms) 96 1216 8 im(y ) (ms) 22 v ds =15 v v g2s =4 v i d = 5...20 ma f = 50...700 mhz f = 700 mhz 600 mhz 500 mhz 400 mhz 300 mhz 200 mhz 100 mhz i d =5ma i d =20ma
bf995 document number 85009 rev. 1.6, 02-feb-06 vishay semiconductors www.vishay.com 5 v ds = 15 v, i d = 5 to 20 ma, v g2s = 4 v, z 0 = 50 s 11 s 12 s 21 s 22 figure 11. input reflection coefficient figure 12. reverse transmission coefficient - j0.2 - j0.5 - j - j2 - j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 700 mhz 100 50 300 500 12920 700 mhz 12921 0 90 1 8 0 - 90 0.04 0.0 8 - 150 - 120 - 60 - 30 120 150 60 30 600 300 figure 13. forward tr ansmission coefficient figure 14. output reflection coefficient 0 90 1 8 0 - 90 0. 8 1.6 - 150 - 120 - 60 120 60 30 12922 700mhz 200 400 50 - 30 i=20ma d i=10ma d i =5ma d 12923 - j0.2 - j0.5 - j - j2 - j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 700 mhz 100 300 500
www.vishay.com 6 document number 85009 rev. 1.6, 02-feb-06 bf995 vishay semiconductors package dimensions in mm mounting pad layout 96 12240 0.50(0.020) 0.35 (0.014) 1.8 (0.070) 1.6 (0.062) 0.9 (0.035) 0.75 (0.029) 1.4 (0.055) 1.2 (0.047) 2.0 (0.078) 1.8 (0.070) 3.0 (0.117) 2.8 (0.109) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.9 (0.035) 0...0.1 (0...0.004) 2.6 (0.101) 2.4 (0.094) i s o metho d e 0.65 (0.025) 1.17 (0.046)
bf995 document number 85009 rev. 1.6, 02-feb-06 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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